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PIC18FXX8 Datasheet, PDF (341/402 Pages) Microchip Technology – 28/40-Pin High-Performance, Enhanced Flash Microcontrollers with CAN Module | |||
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PIC18FXX8
TABLE 27-2: DC CHARACTERISTICS: EEPROM AND ENHANCED FLASH
DC Characteristics
Standard Operating Conditions
Param
No.
Sym
Characteristic
Min Typâ Max Units
Conditions
Internal Program Memory
Programming Specifications
D110 VPP Voltage on MCLR/VPP pin
9.00
â 13.25 V
D113 IDDP Supply Current during
Programming
â
â
10 mA
Data EEPROM Memory
D120 ED Cell Endurance
100K 1M
â E/W -40°C to +85°C
D120A ED Byte Endurance
10K 100K â E/W +85°C to +125°C
D121 VDRW VDD for Read/Write
VMIN
â
5.5 V Using EECON to read/write
VMIN = Minimum operating voltage
D122 TDEW Erase/Write Cycle Time
â
4
â ms
D123 TRETD Characteristic Retention
40
â
â Year Provided no other specifications
are violated
D124
TREF Number of Total Erase/Write
1M
Cycles to Data EEPROM before
Refresh*
10M
â Cycles -40°C to +85°C
D124A TREF Number of Total Erase/Write
Cycles before Refresh*
100K 1M
â Cycles +85°C to +125°C
Program Flash Memory
D130 EP Cell Endurance
10K 100K â E/W -40°C to +85°C
D130A EP Cell Endurance
1000 10K â E/W +85°C to +125°C
D131 VPR VDD for Read
VMIN
â
5.5 V VMIN = Minimum operating voltage
D132 VIE VDD for Block Erase
4.5
â
5.5 V Using ICSP⢠port
D132A VIW VDD for Externally Timed Erase 4.5
or Write
â
5.5 V Using ICSP port
D132B VPEW VDD for Self-Timed Write
VMIN
â
5.5 V VMIN = Minimum operating voltage
D133 TIE ICSP Erase Cycle Time
â
4
â ms VDD ⥠4.5V
D133A TIW ICSP Erase or Write Cycle Time 1
â
â ms VDD ⥠4.5V
(externally timed)
D133A TIW Self-Timed Write Cycle Time
â
2
â ms
D134 TRETD Characteristic Retention
40
â
â Year Provided no other specifications
are violated
â Data in âTypâ column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
* See Section 5.8 âUsing the Data EEPROMâ for more information.
 2004 Microchip Technology Inc.
DS41159D-page 339
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