PIC18F258 Datasheet, PDF (335/384 Pages) Microchip Technology – High Performance, 28/40-Pin Enhanced FLASH Microcontrollers with CAN

PIC18FXX8
TABLE 27-2: DC CHARACTERISTICS: EEPROM AND ENHANCED FLASH
DC Characteristics
Standard Operating Conditions
Param
No.
Sym
Characteristic
Min Typ† Max Units
Conditions
Data EEPROM Memory
D120
D120A
D121
ED
ED
VDRW
Byte Endurance
Byte Endurance
VDD for Read/Write
100K
10K
VMIN
1M
100K
—
D122
D123
TDEW Erase/Write Cycle Time
TRETD Retention
—
2
40
—
D124 TREF
D124A TREF
Number of Total Erase/Write
Cycles to Data EEPROM before
Refresh*
Number of Total Erase/Write
Cycles to Data EEPROM before
Refresh*
1M
100K
10M
1M
— E/W -40°C to +85°C
— E/W +85°C to +125°C
5.5 V Using EECON to read/write
VMIN = Minimum operating voltage
— ms
— Years Provided no specifications are
violated
— Cycles -40°C to +85°C
— Cycles +85°C to +125°C
Program Flash Memory
D130 EP Cell Endurance
10K 100K — E/W -40°C to +85°C
D130A EP Cell Endurance
1000 10K — E/W +85°C to +125°C
D131 VPR VDD for Read
VMIN
—
5.5 V VMIN = Minimum operating voltage
D132 VIE VDD for ISCP Erase
4.5
—
5.5 V Using ICSP port
D132A VIW VDD for ISCP Write
4.5
—
5.5 V Using ICSP port
D132B VPEW VDD for EECON Erase/Write
VMIN
—
5.5 V Using EECON to erase/write
VMIN = Minimum operating voltage
D133 TIE ICSP Erase Cycle Time
—
4
— ms VDD > 4.5V
D133A TIW ICSP Erase or Write Cycle Time 1
(externally timed)
—
— ms VDD > 4.5V
D133B TPIW Self-timed Write Cycle Time
—
2
— ms
D134 TRETD Retention
40
—
— Years Provided no specifications are
violated
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only
and are not tested.
* See Section 5.8 for more information.
 2002 Microchip Technology Inc.
Preliminary
DS41159B-page 333