MC68HC05PV8 Datasheet, PDF (160/196 Pages) Freescale Semiconductor, Inc – Techinal Data - rev 1.9

Technical Data
Freescale Semiconductor, Inc.
register. When this bit is set from 0 to 1 (erased) the protection
remains until the next power-on or external reset. EEPRT can only be
written to 0 when the ELAT bit in the EEPROM control register is set.
1 = Block 2 of the EEPROM array is not protected; all 128 bytes of
EEPROM can be accessed for any read, erase or
programming operations
0 = Block 2 of the EEPROM array is protected; any attempt to
erase or program a location will be unsuccessful
13.5 EEPROM READ, ERASE and Programming Procedures
13.5.1 READ Procedure
To read data from EEPROM the EELAT bit must be clear. EEPGM,
EER1 and EER0 are forced to zero. The EEPROM is read as if it were a
normal ROM. The charge pump generator is off since EEPGM is zero. If
a read is performed while ELAT is set, data will be read as $FF.
13.5.2 ERASE Procedure
There are three types of ERASE operation mode (see Table 13-1 Erase
Mode Select), byte erase, block erase or bulk erase.
To erase a byte of EEPROM set EELAT = 1, ER1 = 0 and ER0 = 1, write
to the address to be erased and set EEPGM for a time t_EBYTE.
To erase a block of EEPROM set EELAT = 1, ER1 = 1 and ER0 = 0,
write to any address in the block and set EEPGM for a time t_EBLOC.
For a bulk erase set EELAT = 1, ER1 = 1, and ER0 = 1, write to an
address in the array with A0 or A1 = 1, and set EEPGM for a time t_EBULK.
13.5.3 Programming Procedure
To program the content of EEPROM, set EELAT bits, write data to the
desired address and set the EEPGM bit. After the required programming
delay t_EEPGM, EELAT must be cleared. This also resets EEPGM. During
Technical Data
MC68HC(8)05PV8/A — Rev. 1.9
EEPROM
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