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| IC61C6416 Datasheet, PDF (72/80 Pages) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM | |||
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HYB18T256324Fâ[16/20/22]
256-Mbit DDR SGRAM
Electrical Characteristics
4.10
Termination IV Characteristic at 240 Ohms
Figure 57 represents the ADD/CMD termination Pull-Up IV characteristic under process, voltage and temperature
best and worst case conditions. The actual ADD/CMD termination Pull-Up current must lie between these two
bounding curves. The value of the external ZQ resistor is 240â¦, setting the nominal termination impedance to
240â¦. (CKE = 1at the RES transition during Power-Up for ADD/CMD terminations).
/H M 4 E RM I NA TI ON #H A RA C T ER ST I CS
6 $$ 1
6 OU T 6
Figure 57 240 Ohm Active Termination Characteristic
Table 40 lists the numerical values of the minimum and maximum allowed values of the ADD/CMD termination IV
characteristic.
Table 40 Programmed Terminator Characterisitc at 240 Ohm
Voltage (V)
Terminator Pull-Up Current
(mA)
Voltage (V)
Minimum
Maximum
1.0
0.1
-0.41
-0.55
1.1
0.2
-0.80
-1.07
1.2
0.3
-1.17
-1.58
1.3
0.4
-1.53
-2.06
1.4
0.5
-1.87
-2.53
1.5
0.6
-2.20
-2.97
1.6
0.7
-2.50
-3.40
1.7
0.8
-2.79
-3.80
1.8
0.9
-3.06
-4.17
1.9
Terminator Pull-Up Current
(mA)
Minimum
Maximum
-3.32
-4.53
-3.56
-4.86
-3.79
-5.21
-4.01
-5.50
-4.23
-5.83
-4.46
-6.17
-4.68
-6.52
-4.90
-6.88
-
-7.21
-
-7.54
Data Sheet
72
Rev. 1.11, 04-2005
10292004-DOXT-FS0U
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