IC61C6416 Datasheet, PDF(27/80 Page) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM

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IC61C6416 Datasheet, PDF (27/80 Pages) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM

◁

HYB18T256324Fâ[16/20/22]

256-Mbit DDR SGRAM

Functional Description

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3.3.4 Output impedance and Termination DC Electrical Characteristics

The Driver and Termination impedances are determined by applying VDDQ/2 nominal (1.0 V) at the corresponding

input / output and by measuring the current flowing into or out of the device. VDDQ is set to the nominal value of

2.0 V. (see Table 1)

IOH is the current flowing out of DQ when the Pull-Up transistor is activated and the DQ termination disabled.

IOLis the current flowing into DQ when the Pull-Down transistor is activated and the DQ termination disabled.

ITCAH(ZQ) is the current flowing out of the Termination of Commands and Addresses for a ZQ termination value.

Table 15 DC Electrical Characteristics

Parameter

IOH

IOL

ITCAH(ZQ)

ZQ Value

ZQ/6

ZQ/6

ZQ

Nom.

Unit

240

â¦

min

max

20.5

25.0

mA

20.5

25.0

mA

3.4

4.2

mA

Notes

1

1

1

Note: 1: Measurement performed with VDDQ =2.0 V (nominal see Table 1) and by applying VDDQ/2 (1.0 V) at the

corresponding Input / Output.

0Â°C â¤ TC â¤ 85Â°C.

Data Sheet

27

Rev. 1.11, 04-2005

10292004-DOXT-FS0U

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