IC61C6416 Datasheet, PDF(49/80 Page) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM

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IC61C6416 Datasheet, PDF (49/80 Pages) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM

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3.8.3 Consecutive Read Bursts

3.8.3.1 Gapless Bursts

HYB18T256324Fâ[16/20/22]

256-Mbit DDR SGRAM

Functional Description

#,+

#,+

#OM 2$

.$

2$

.$

!DD R "#X

"#Y

#!3LATE NCY

.$

.$

.$

.$

.$

.$

.$

.$

2$13

$1

$X $X $X $X $Y $Y $Y $Y

#!3LA TE NCY

2$13

$1

$X $X $X $X $Y $Y $Y $Y

"#X" ANK#OLU MNADD RESS X

"#Y"AN K#OLU MN AD DRESS Y

$X $ATAFROM" # X

$Y $ATAFROM" # Y

#OM#OMMA ND

!DDR!DDRES S "#

2$2% !$

.$./0O R$ES ELEC T

$ONgT#ARE

$1S4E RMIN ATION SO FF

2$13 .OTD RIVE N

Figure 32 Gapless Consecutive Read Bursts

1. The second RD command may be either for the same bank or another bank

2. Shown with nominal tAC and tDQSQ

3. Example applies only when READ commands are issued to same device

4. RDQS will start driving high 1/2 cycle prior to the first falling edge and stop 1/2 cycle after the last rising edge

of RDQS

5. The DQ terminations are switched off 1 cycle before the first Read Data and on again 1 cycle after the last

Read data

Data Sheet

49

Rev. 1.11, 04-2005

10292004-DOXT-FS0U

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