IC61C6416 Datasheet, PDF(48/80 Page) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM

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IC61C6416 Datasheet, PDF (48/80 Pages) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM

◁

3.8.2 Read - Basic Sequence

HYB18T256324Fâ[16/20/22]

256-Mbit DDR SGRAM

Functional Description

#,+

#,+

#OM

2$

.$

.$

.$

.$

.$

.$

.$

.$

.$

!DDR "#

2$13

$1

#!3LATENCY

$ $ $ $

#!3LATENCY

2$13

$1

$ $ $ $

"#"ANK#OLUMNADDRESS

$X$ATAFROM"#

#OM#OMMAND

!DDR!DDRESS"#

2$2%!$

.$.OPOR$ESELECT

$ONgT#ARE

$1S4ERMINATIONSOFF

2$13.OTDRIVEN

Figure 31 Read Burst

1. Shown with nominal tAC and tDQSQ

2. RDQS will start driving high 1/2 cycle prior to the first falling edge and stop 1/2 cycle after the last rising edge

of RDQS

3. The DQ terminations are switched off 1 cycle before the first Read Data and on again 1 cycle after the last

Read data

Data Sheet

48

Rev. 1.11, 04-2005

10292004-DOXT-FS0U

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