IC61C6416 Datasheet, PDF(54/80 Page) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM

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IC61C6416 Datasheet, PDF (54/80 Pages) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM

◁

HYB18T256324Fâ[16/20/22]

256-Mbit DDR SGRAM

Functional Description

3.8.6 Read followed by Precharge on the same Bank

#, +

#,+

#O M

2$

.$

02%

.$

.$

.$

.$

.$

.$

!D DR "#

2$ 1 3

$1

#! 3LA TE NCY

$ $ $ $

2$ 13

$1

#! 3LATE NCY

$ $ $ $

Figure 37

T2 0

#O M#O M MAN D

!D DR!D D RE SS " #

"# "A N K# O LU MNA DD RE S S

2$ 2 % !$

02 % 0 2 %# ( ! 2 '%

$X $ A TA FRO M" #

.$. / 0OR$ E SELEC T

Read followed by Precharge on the same Bank

$O N gT# A RE

$1 S4 ERM INA TIO N SO FF

2$ 1 3. O TD RIV EN

1. tRAS requirement must also be met before issuing PRE command

2. RD and PRE commands are applied to the same bank.

3. Shown with nominal tAC and tDQSQ

4. RDQS will start driving high 1/2 cycle prior to the first falling edge and stop 1/2 cycle after the last rising edge

of RDQS

Data Sheet

54

Rev. 1.11, 04-2005

10292004-DOXT-FS0U

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