IC61C6416 Datasheet, PDF(45/80 Page) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM

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IC61C6416 Datasheet, PDF (45/80 Pages) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM

◁

3.7.8 Write followed by Precharge on same Bank

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#, +

#OM 72

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$% 3

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$% 3

HYB18T256324Fâ[16/20/22]

256-Mbit DDR SGRAM

Functional Description

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02%

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!DDR "#

7$ 13

7,

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T72

T2 0

$1

72

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$ $ $ $

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T72

T2 0

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Figure 28 Write followed by Precharge on same Bank

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$% 3$ E SELEC T

#O M# O MM AND

!D DR! D DRE S S" #

7,7 RITE, ATEN CY

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"# " A NK#O LUM NAD DRE SS

72 7 2)4 %

02 % 0 2 % #( ! 2 ' %

$X $ ATA TO " # X

$Y $ ATA TO " # Y

1. Shown with nominal value of tDQSS.

2. WR and PRE commands are to same bank

3. tRAS requirement must also be met before issuing PRE command

4. WDQS can only transition when data is applied at the chip input and during pre- and postambles

Data Sheet

45

Rev. 1.11, 04-2005

10292004-DOXT-FS0U

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