IC61C6416 Datasheet, PDF(44/80 Page) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM

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IC61C6416 Datasheet, PDF (44/80 Pages) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM

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HYB18T256324Fâ[16/20/22]

256-Mbit DDR SGRAM

Functional Description

3.7.7 Write with Autoprecharge followed by Read / Read with Autoprecharge

#, +

#,+

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Figure 27

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!D DR!D D RE SS" #

7, 7 RITE, A TE NC Y

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2 $ 2 $ !

"# "A N K#O LUM NA D D RE SS

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2$ 2$ ! 2 % ! $O R

2 %! $ W ITH ! U TO PRE CHA RG E

$ $ A TA TO "#X

$% 3$ ES E LE CT

.$./ 0O R$E S ELE CT

Write with Autoprecharge followed by Read or Read with Autoprecharge on another bank

1. Shown with nominal value of tDQSS.

2. The RD command is only allowed for another activated bank

3. tWR/A is set to 3 in this example

4. WDQS can only transition when data is applied at the chip input and during pre- and postambles

Data Sheet

44

Rev. 1.11, 04-2005

10292004-DOXT-FS0U

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