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| IC61C6416 Datasheet, PDF (70/80 Pages) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM | |||
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HYB18T256324Fâ[16/20/22]
256-Mbit DDR SGRAM
Electrical Characteristics
4.8
Termination IV Characteristic at 60 Ohms
Figure 55 represents the DQ termination Pull-Up IV characteristic under process, voltage and temperature best
and worst case conditions. The actual DQ termination Pull-Up current must lie between these two bounding
curves. The value of the external ZQ resistor is 240â¦, setting the nominal DQ termination impedance to 60â¦.
(Extended Mode Register programmed to ZQ/4).
/ H M 4E RM I NA T I ON #H A RA CT E RS T IC S
6 $$ 1
6 OU T 6
Figure 55 60 Ohm Active Termination Characteristic
Table 38 lists the numerical values of the minimum and maximum allowed values of the output driver termination
IV characteristic.
Table 38 Programmed Terminator Characterisitc at 60 Ohm
Voltage (V)
Terminator Pull-Up Current
(mA)
Voltage (V)
Minimum
Maximum
1.0
0.1
-1.63
-2.18
1.1
0.2
-3.19
-4.28
1.2
0.3
-4.69
-6.30
1.3
0.4
-6.12
-8.25
1.4
0.5
-7.49
-10.11
1.5
0.6
-8.78
-11.89
1.6
0.7
-10.01
-13.58
1.7
0.8
-11.16
-15.19
1.8
0.9
-12.25
-16.69
1.9
Terminator Pull-Up Current
(mA)
Minimum
Maximum
-13.27
-18.11
-14.23
-19.45
-15.14
-20.83
-16.04
-22.00
-16.94
-23.33
-17.82
-24.67
-18.70
-26.09
-19.58
-27.50
-
-28.86
-
-30.15
Data Sheet
70
Rev. 1.11, 04-2005
10292004-DOXT-FS0U
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