IC61C6416 Datasheet, PDF (68/80 Pages) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM

4.5
Output Test Conditions
HYB18T256324F–[16/20/22]
256-Mbit DDR SGRAM
Electrical Characteristics
V
DDQ
60 Ohm
DQ
DQS
Figure 53 Output Test Circuit
Note: V_DDQ=2.0 ±0.1 V, Tc=0 °C to 85 °C, see Table 1
4.6
Pin Capacitances
Test point
Table 36 Capacitances
Parameter
Input capacitance:
CLK, CLK
Input capacitance delta:
CLK, CLK
Input capacitance:
A0-A11, BA0-1,CKE, CS, CAS, RAS, WE, CKE, RES
Input capacitance delta:
A0-A11, BA0-1,CKE, CS, CAS, RAS, WE, CKE, RES
Input capacitance:
DQ0-DQ31, RDQS0-RDQS3, WDQS0-WDQS3, DM0-
DM3
Input capacitance delta:
DQ0-DQ31, RDQS0-RDQS3, WDQS0-WDQS3, DM0-
DM3
Symbol
CCK
CDCK
CI
DCI
CIO
DCIO
Min
Max
Unit Notes
2.0
4.0
pF
0.1
pF
1
2.0
4.0
pF
0.6
pF
1
2.5
4.5
pF
0.6
pF
2
1. The input capcitance per pin group will not differ by more than this maximum amount for any given device.
2. The IO capacitance per RDQS and DQ byte / group will not differ by more than this maximum amount for any
given device.
Data Sheet
68
Rev. 1.11, 04-2005
10292004-DOXT-FS0U