IC61C6416 Datasheet, PDF (65/80 Pages) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM

HYB18T256324F–[16/20/22]
256-Mbit DDR SGRAM
Electrical Characteristics
4
Electrical Characteristics
4.1
Absolute Maximum Ratings
Table 31 Absolute Maximum Ratings
Parameter
Power Supply Voltage
Power Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Storage Temperature
Short Circuit Output Current
Symbol
V_DD
V_DDQ
V_IN
V_OUT
T_STG
I_OUT
Rating
min.
-0.5
-0.5
-0.5
-0.5
-55
—
max.
2.5
2.5
V_DDQ+0.5
V_DDQ+0.5
+150
50
Unit
V
V
V
V
°C
mA
Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage of the
device. This is a stress rating only, and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Table 32 Operation Conditions
Parameter
Operation Temperature (Junction)
Operation Temperature (Case)
Power Dissipation
Symbol
T_J
T_C
P_D
Range
min.
0
0
—
max.
+90
+85
3.2
Unit
°C
°C
W
Data Sheet
65
Rev. 1.11, 04-2005
10292004-DOXT-FS0U