IC61C6416 Datasheet, PDF(52/80 Page) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

IC61C6416 Datasheet, PDF (52/80 Pages) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM

◁

HYB18T256324Fâ[16/20/22]

256-Mbit DDR SGRAM

Functional Description

3.8.4 Read with Autoprecharge

#, +

#,+

#O M 2$!

.$

!

! !

"#

!

.$

.$

.$

.$

.$

.$

.$

2$ 1 3

$1

#! 3LATE NCY

$ $ $ $

#! 3LA TE NCY

2$ 1 3

$1

$ $ $ $

",

T2 0

"EG INO F

!UTOPRECH A RGE

"# " A N K# OLU MNA D D RE SS

2$ ! 2 % !$ W ITH A UTO P RE CHA RG E

$X $ A TA FRO M" #

#O M# O MMA ND

!D DR! DD RE SS" #

.$. /0 O R$ E SE LE CT

$O NgT# A RE

$1 S4E RMINA TIO NSOFF

2$ 1 3. O TD RIV EN

Figure 35 Read with Autoprecharge

1. When issuing a RD/A command , the tRAS requirement must be met at the beginning of Autoprecharge

2. Shown with nominal tAC and tDQSQ

3. RDQS will start driving high 1/2 cycle prior to the first falling edge and stop 1/2 cycle after the last rising edge

of RDQS

4. The DQ terminations are switched off 1 cycle before the first Read Data and on again 1 cycle after the last

Read data

5. tRAS Lockout support

Data Sheet

52

Rev. 1.11, 04-2005

10292004-DOXT-FS0U

▷