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| IC61C6416 Datasheet, PDF (71/80 Pages) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM | |||
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HYB18T256324Fâ[16/20/22]
256-Mbit DDR SGRAM
Electrical Characteristics
4.9
Termination IV Characteristic at 120 Ohms
Figure 56 represents the DQ or ADD/CMD termination Pull-Up IV characteristic under process, voltage and
temperature best and worst case conditions. The actual termination Pull-Up current must lie between these two
bounding curves. The value of the external ZQ resistor is 240â¦, setting the nominal termination impedance to
120â¦. (Extended Mode Register programmed to ZQ/2 for DQ terminations or CKE = 0 at the RES transition during
Power-Up for ADD/CMD terminations).
/ HM 4E RM I NA T IO N # HA R AC T E RS TI C S
6 $$ 1
6 OU T 6
Figure 56 120 Ohm Active Termination Characteristic
Table 39 lists the numerical values of the minimum and maximum allowed values of the termination IV
characteristic.
Table 39 Programmed Terminator Characterisitics at 120 Ohm
Voltage(V)
Terminator Pull-Up Current
(mA)
Voltage (V)
Minimum
Maximum
1.0
0.1
-0.81
-1.09
1.1
0.2
-1.60
-2.14
1.2
0.3
-2.34
-3.15
1.3
0.4
-3.06
-4.12
1.4
0.5
-3.74
-5.06
1.5
0.6
-4.39
-5.94
1.6
0.7
-5.00
-6.79
1.7
0.8
-5.58
-7.59
1.8
0.9
-6.12
-8.35
1.9
Terminator Pull-Up Current
(mA)
Minimum
Maximum
-6.63
-9.06
-7.11
-9.72
-7.57
-10.42
-8.02
-11.00
-8.47
-11.67
-8.91
-12.33
-9.35
-13.05
-9.79
-13.75
-
-14.43
-
-15.08
Data Sheet
71
Rev. 1.11, 04-2005
10292004-DOXT-FS0U
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