IC61C6416 Datasheet, PDF(42/80 Page) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

IC61C6416 Datasheet, PDF (42/80 Pages) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM

◁

HYB18T256324Fâ[16/20/22]

256-Mbit DDR SGRAM

Functional Description

3.7.5 Write followed by Read

#, +

#,+

#O M

72

.$

$% 3

$% 3

$% 3

$% 3

$% 3

2$

$% 3

$% 3

!D DR

"#

"#

7$ 1 3

$1

7,

$ $ $ $

T7 42

72

.$

$% 3

$% 3

$% 3

$% 3

$% 3

$% 3

2$

.$

"#

"#

7$ 13

$1

7,

$ $ $ $

T7 42

72

.$

$% 3

$% 3

$% 3

$% 3

$% 3

$% 3

$% 3

2$

"#

"#

7$ 1 3

7,

T7 42

$1

$ $ $ $

Figure 25 Write followed by Read

$ $ A TATO " # X

#O M# O M MAN D

!DD R! D DRE SS"#

7,7RITE, ATE N CY

$O N gT# A RE

"# " AN K# OLUM NAD DRE SS

7272 )4 %

2$2 % ! $

$%3 $ E SELEC T

.$ . / 0$ ES ELEC T

1. Shown with nominal value of tDQSS.

2. The RD command may be either for the same bank or another bank.

3. WDQS can only transition when data is applied at the chip input and during pre- and postambles.

Data Sheet

42

Rev. 1.11, 04-2005

10292004-DOXT-FS0U

▷