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| IC61C6416 Datasheet, PDF (41/80 Pages) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM | |||
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HYB18T256324Fâ[16/20/22]
256-Mbit DDR SGRAM
Functional Description
3.7.4 Write with Autoprecharge
#, +
#, +
#O M 72 !
. $
$% 3
$% 3
$% 3
!
!
!
" #
!
$% 3
$% 3
$% 3
$% 3
$% 3
$% 3
7$ 1 3
7,
T 7 2 !
T 20
$1
$ $ $ $
7$ 1 3
7,
T2 ! 3- ) .
SA TI SF I ED
"E G IN O F
!U TO P RE CH A R GE
T7 2 !
T 20
$1
$ $ $ $
7$ 13
$1
7,
$ $ $ $
T2 ! 3- ) .
SA TI SF I ED
"E GI N OF
! U TO P R E CH AR G E
T 7 2 !
T2 0
T2 ! 3- ) .
SA TI SF I ED
"E GI N OF
! U TO P R E CH AR G E
Figure 24 Write with Autoprecharge
#O M #O M M AN D
!D DR !D D RE S S " #
7, 7 R IT E , A TE NC Y
$O N g T #A R E
" # " A NK # O LU MN A DD R E S S
7 2 ! 7 2 ) 4% WI T H A UT O
P RE C HA RG E
$ $ AT A T O " #
$% 3 $ E SE L EC T
. $ . / 0 O R $ ES E L EC T
1. Shown with nominal value of tDQSS
2. tWR/A starts at the first rising edge of CLK after the last valid edge of WDQS.
3. tRP starts after tWR/A has been expired.
4. when issuing a WR/A command please consider that the tRAS requirement also must be met at the beginning
of tRP
5. tWR/A * tCYC ⥠tWR
6. WDQS can only transition when data is applied at the chip input and during pre- and postambles
Data Sheet
41
Rev. 1.11, 04-2005
10292004-DOXT-FS0U
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