IC61C6416 Datasheet, PDF(59/80 Page) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM

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IC61C6416 Datasheet, PDF (59/80 Pages) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM

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3.10

Precharge (PRE/PREALL)

#, +

#, +

#+ %

#3

2!3

#!3

7%

!

!

!,,

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Figure 43

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Precharge Command

Table 26

A8 / AP

0

0

0

0

1

BA1, BA0 precharge bank selection

BA1

BA0

0

0

0

1

1

0

1

1

X

X

HYB18T256324Fâ[16/20/22]

256-Mbit DDR SGRAM

Functional Description

The Precharge command is used to deactivate the

open row in a particular bank (PRE) or the open rows in

all banks (PREALL). The bank(s) will enter the idle

state and be available again for a new row access after

the time tRP. A8/AP sampled with the PRE command

determines whether one or all banks are to be

precharged. For PRE commands BA0 and BA1 select

the bank. For PREALL inputs BA0 and BA1 are âDonât

Careâ. The PRE/PREALL command may not be given

unless the tRAS requirement is met for the selected bank

(PRE), or for all banks (PREALL).

precharged bank(s)

Bank 0 only

Bank 1 only

Bank 2 only

Bank 3 only

All banks

Data Sheet

59

Rev. 1.11, 04-2005

10292004-DOXT-FS0U

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