IC61C6416 Datasheet, PDF(53/80 Page) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM

English

English German Russian Spanish Italian Polish Chinese Japanese Korean French Portuguese	Language :

IC61C6416 Datasheet, PDF (53/80 Pages) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM

◁

HYB18T256324Fâ[16/20/22]

256-Mbit DDR SGRAM

Functional Description

3.8.5 Read followed by Write

#, +

#,+

#O M 2$

$% 3

$% 3

$% 3

$% 3

!D DR "#R

2$ 13

#! 3LATE N CY

T2 47

$% 3

72

$% 3

$% 3

"#W

7RITELATENC Y

$% 3

$% 3

$% 3

7$ 1 3

$1

$ R $ R $ R $ R

$W $ W $ W $ W

2$

$% 3

$% 3

$% 3

$% 3

$% 3

72

$% 3

$% 3

$% 3

$% 3

$% 3

"#R

2$ 13

#! 3 LATEN CY

T2 47

"#W

7RITE LATE NC Y

7$ 1 3

$1

$ R $ R $ R $ R

$W $ W $ W

"# R" A NK# OLU M NA DD RE S SFO R2 % ! $

"# W " AN K # O LU MNA DD RE SSFO R7 2 )4 %

2$ 2 % !$

727 2)4 %

$% 3 $ E SE LE C T

$X R2 % ! $$ ATA FRO M "#

$X W7 2)4 % $ ATA FRO M " #

#O M# O MMA ND

!D DR!D D RE S S" #

$O N gT#A RE

$1 S4 E RM IN ATIO NS O FF

2$ 1 3.O TD RIVE N

Figure 36 Read followed by Write

1. Shown with nominal tAC, tDQSQ and tDQSS

2. RDQS will start driving high 1/2 cycle prior to the first falling edge and stop 1/2 cycle after the last rising edge

of RDQS

3. The DQ terminations are switched off 1 cycle before the first Read Data and on again 1 cycle after the last

Read data

4. WDQS can only transition when data is applied at the chip input and during pre- and postambles

5. The Write command may be either on the same bank or on another bank

Data Sheet

53

Rev. 1.11, 04-2005

10292004-DOXT-FS0U

▷