IC61C6416 Datasheet, PDF(58/80 Page) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM

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IC61C6416 Datasheet, PDF (58/80 Pages) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM

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HYB18T256324Fâ[16/20/22]

256-Mbit DDR SGRAM

Functional Description

3.9.2 DTERDIS followed by Write

#, +

#,+

#O M $4 $

$% 3

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!D DR

#! 3LATE N CY

72

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7RITELATENC Y

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$1

$W $ W $ W $ W

$4 $

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72

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7RITE LATE NC Y

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727 2)4 %

$4 $ $ 4 % 2$ )3

$% 3 $ E S ELE CT

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#O M# O MM AND

!D DR! D DRE S S" #

$O N gT#A RE

$1 S4 E RM IN ATIO NS O FF

Figure 42 DTERDIS Command followed by Write

1. Write shown with nominal value of tDQSS

2. WDQS can only transition when data is applied at the chip input and during pre- and postambles

3. The minimum distance between DTERDIS and Write is (CL -WL + 4) clocks.

Data Sheet

58

Rev. 1.11, 04-2005

10292004-DOXT-FS0U

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