IC61C6416 Datasheet, PDF (66/80 Pages) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM

HYB18T256324F–[16/20/22]
256-Mbit DDR SGRAM
Electrical Characteristics
4.2
Recommended Power & DC Operation Conditions.
All values are recommended operating conditions unless otherwise noted. T_c = 0 to 85 °C.
(0°C ≤ T_C ≤ +85°C, V_DD = +2.0 V ± 0.10 V, V_DDQ = +2.0 V ± 0.10 V, see Table 1)
Table 33 Power & DC Operation Conditions
Parameter
Power Supply Voltage
Power Supply Voltage for I/O Buffer
Reference Voltage
Output Low Voltage
Input leakage current
CLK Input leakage current
Output leakage current
Symbol Speed
sort
V_DD
V_DDQ
V_REF
V_OL(DC)
I_IL
I_ILC
I_OL
–1.6
–2.0
–2.2
–1.6
–2.0
–2.2
–1.6
–2.0
–2.2
Limit Values
Unit Notes
min.
typ.
max.
1.9
2.0
2.1
V
1)
1.9
2.0
2.1
V
1)
1.9
2.0
2.1
V
1)
1.9
2.0
2.1
V
1)
1.9
2.0
2.1
V
1)
1.9
2.0
2.1
V
1)
0.72*V_DDQ 0.73*V_DDQ 0.74*V_DDQ V ²⁾
0.72*V_DDQ 0.73*V_DDQ 0.74*V_DDQ
2)3)
0.72*V_DDQ 0.73*V_DDQ 0.74*V_DDQ
2)3)
0.4*V_DDQ V
–5
+5
µA ⁴⁾
–5
+5
µA
–5
+5
µA ⁴⁾
1) V_DDQ tracks with V_DD. AC parameters are measured with V_DD and V_DDQ tied together.
2) V_REF is allowed ± 19mV for DC error and an additionnal ± 28mV for AC noise.
3) V_REF is expected to equal 73% of V_DDQ for the transmitting device and to track variations in the DC level of the
same. Peak-to-peak noise on V_REF may not exceed ±2% V_REF (DC). Thus, from 73% of V_DDQ.
4) I_IL and I_OL are measured with ODT disabled.
Data Sheet
66
Rev. 1.11, 04-2005
10292004-DOXT-FS0U