IC61C6416 Datasheet, PDF(50/80 Page) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM

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IC61C6416 Datasheet, PDF (50/80 Pages) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM

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HYB18T256324Fâ[16/20/22]

256-Mbit DDR SGRAM

Functional Description

3.8.3.2 Bursts with Gaps

#, +

#,+

#O M

2$

.$

.$

2$

.$

.$

.$

.$

.$

.$

.$

!D DR "#X

"#Y

#! 3 LATE NCY

2$ 1 3

$1

#! 3 LATEN CY

$X $X $X $X

$Y $Y $Y $Y

2$ 1 3

$1

$X $X $X $X

$Y $Y $Y

Figure 33 Consecutive Read Bursts with Gaps

"# X " A NK # OLUM NA D DRES SX

"# Y " A NK # OLUM NA D DRES SY

2$ 2 %! $

$X $ ATA FRO M" # X

$Y $ ATA FRO M" # Y

#O M#O M MAN D

!D DR!D D RE SS " #

$O NgT# A RE

$1 S4 E RM INA TION SO FF

2$ 1 3. O TDRIV EN

1. The second RD command may be either for the same bank or another bank

2. RDQS will start driving high 1/2 cycle prior to the first falling edge and stop 1/2 cycle after the last rising edge

of RDQS.

3. The DQ terminations are switched off 1 cycle before the first Read Data and on again 1 cycle after the last

Read data

Data Sheet

50

Rev. 1.11, 04-2005

10292004-DOXT-FS0U

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