IC61C6416 Datasheet, PDF(39/80 Page) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM

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IC61C6416 Datasheet, PDF (39/80 Pages) Integrated Circuit Solution Inc – 64K X 16 HIGH-SPEED CMOS STATIC RAM

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3.7.3 Write - Consecutive Bursts

3.7.3.1 Gapless Bursts

HYB18T256324Fâ[16/20/22]

256-Mbit DDR SGRAM

Functional Description

#, +

#,+

#O M

72

.$

72

.$

$% 3

$% 3

$% 3

$% 3

$% 3

$% 3

!D DR "#X

"#Y

7$ 1 3

7,

$1

$X $X $X $X $Y $Y $Y $Y

7$ 1 3

$1

7,

$X $X $X $X $Y $Y $Y $Y

7$ 1 3

7,

$1

$X $X $X $X $Y $Y $Y $Y

727 2)4 %

$% 3 $ ES ELEC T

.$. / 0$ E SELECT

"#X " AN K # O LU MNA DD RE SSX

"#Y " AN K # O LU MNA DD RE SSY

7, 7RITE , ATE NC Y

$O NgT# A RE

$X $ ATA TO " # X

$Y $ ATA TO " # Y

#O M#O M MAN D

!D DR!D D RE S S" #

Figure 22 Gapless Write Bursts

1. Shown with nominal value of tDQSS

2. The second WR command may be either for the same bank or another bank

3. WDQS can only transition when data is applied at the chip input and during pre- and postambles

Data Sheet

39

Rev. 1.11, 04-2005

10292004-DOXT-FS0U

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