W631GG6KB-15 Datasheet, PDF (97/158 Pages) Winbond – Double Data Rate architecture: two data transfers per clock cycle

W631GG6KB
9. ELECTRICAL CHARACTERISTICS
9.1 Absolute Maximum Ratings
PARAMETER
SYMBOL
RATING
UNIT NOTES
Voltage on VDD pin relative to VSS
VDD
-0.4 ~ 1.975
V
1, 3
Voltage on VDDQ pin relative to VSS
VDDQ
-0.4 ~ 1.975
V
1, 3
Voltage on any pin relative to VSS
VIN, VOUT
-0.4 ~ 1.975
V
1
Storage Temperature
TSTG
-55 ~ 150
°C
1, 2
Notes:
1. Stresses greater than those listed under ―Absolute Maximum Ratings‖ may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions,
please refer to JESD51-2 standard.
3. VDD and VDDQ must be within 300 mV of each other at all times. VREFDQ and VREFCA must not greater than 0.6 x VDDQ.
When VDD and VDDQ are less than 500 mV, VREFDQ and VREFCA may be equal to or less than 300 mV.
9.2 Operating Temperature Condition
PARAMETER
SYMBOL RATING
UNIT
NOTES
Operating Temperature (for -11/-12/-15)
TCASE
0 ~ 85
°C
1, 3, 5
Operating Temperature (for 12I/12A/15I/15A)
TCASE
-40 ~ 95
°C
1, 3, 4, 5, 6, 7
Operating Temperature (for 12A/15A)
TA
-40 ~ 95
°C
2
Operating Temperature (for 12K/15K)
TCASE
-40 ~ 105
°C
1, 3, 4, 5, 6, 8
Operating Temperature (for 12K/15K)
TA
-40 ~ 105
°C
2
Notes:
1. Operating temperature is the case surface temperature on the center/top side of the DRAM. For measurement conditions,
please refer to the JEDEC document JESD51-2.
2. Operating ambient temperature is the surrounding temperature of the DRAM.
3. Supporting 0°C ≤ TCASE ≤ 85°C with full JEDEC AC and DC specifications.
4. Supporting -40°C ≤ TCASE ≤ 85°C with full JEDEC AC and DC specifications.
5. Supporting 0°C ≤ TCASE ≤ 85°C and being able to extend to 95°C operating temperature. Full specifications are provided in
this range, but the following additional conditions apply:
(a) Refresh commands have to be doubled in frequency, therefore reducing the Refresh interval tREFI to 3.9 µS.
(b) If Self-Refresh operation is required in the Extended Temperature Range, than it is mandatory to either use the Manual
Self-Refresh mode with Extended Temperature Range capability (MR2 A6 = 0_b and MR2 A7 = 1_b) or enable the Auto
Self-Refresh mode (ASR) (MR2 A6 = 1_b, MR2 A7 is don't care).
6. Supporting -40°C ≤ TCASE ≤ 85°C and being able to extend to 95°C (for 12I/12A/15I/15A) or 105°C (for 12K/15K) operating
temperature. Full specifications are provided in this range, but the following additional conditions apply:
(a) Refresh commands have to be doubled in frequency, therefore reducing the Refresh interval tREFI to 3.9 µS.
(b) If Self-Refresh operation is required in the Extended Temperature Range, than it is mandatory to either use the Manual
Self-Refresh mode with Extended Temperature Range capability (MR2 A6 = 0_b and MR2 A7 = 1_b) or enable the Auto
Self-Refresh mode (ASR) (MR2 A6 = 1_b, MR2 A7 is don't care).
7. During operation, the DRAM case temperature must be maintained between -40 to 95°C for 12I/12A/15I/15A parts under all
specification parameters.
8. During operation, the DRAM case temperature must be maintained between -40 to 105°C for 12K/15K parts under all
specification parameters.
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Publication Release Date: Feb. 27, 2013
Revision A04