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JDP2S01T Datasheet, PDF (134/150 Pages) Toshiba Semiconductor – UHF~VHF Band RF Attenuator Applications
Philips Semiconductors
ISP1362
Single-chip USB OTG controller
20. Dynamic characteristics
Table 148: Dynamic characteristics
VCC = 3.0 V to 3.6 V; GND = 0 V; Tamb = −40 °C to +85 °C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Reset
tW(RESET)
pulse width on input RESET crystal oscillator running
10
-
crystal oscillator
[1] -
-
stopped
Crystal oscillator
fXTAL
crystal frequency
RS
series resistance
CLOAD
load capacitance
External clock input
[2] -
12
-
-
CX1, CX2 = 22 pF
-
12
J
external clock jitter
-
-
tDUTY
tCR, tCF
clock duty cycle
rise time and fall time
45
50
-
-
[1] Dependent on the crystal oscillator start-up time.
[2] Tolerance of the clock frequency is ±50 ppm.
Max
Unit
-
ms
-
ms
-
MHz
100
Ω
-
pF
500
ps
55
%
3
ns
Table 149: Dynamic characteristics: analog I/O lines (D+, D−)[1]
VCC = 3.0 V to 3.6 V; GND = 0 V; Tamb = −40 °C to +85 °C; CL = 50 pF; RPU = 1.5 kΩ ± 5 % on DP to VTERM; unless
otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Driver characteristics
tFR
tFF
FRFM
VCRS
rise time
CL = 50 pF;
10% to 90% of
|VOH − VOL|
fall time
CL = 50 pF;
90% to 10% of
|VOH − VOL|
differential rise/fall time
matching (tFR/tFF)
output signal crossover voltage
4
-
4
-
[2] 90
-
[2][3] 1.3
-
20
ns
20
ns
111.11 %
2.0
V
[1] DP represents OTG_DP1 and H_DP2, and DM represents OTG_DM1 and H_DM2. Test circuit.
[2] Excluding the first transition from the idle state.
[3] Characterized only, not tested. Limits guaranteed by design.
Table 150: Dynamic characteristics: charge pump
VCC = 3.0 V to 3.6 V; GND = 0 V; Tamb = −40 °C to +85 °C; CLOAD = 2 µF; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Driver characteristics
tSTART-UP
rise time to VBUS = 4.4 V
ILOAD = 8 mA;
CLOAD = 10 µF
-
-
tCOMP_CLK
clock period
1.5
-
Max
100
3
Unit
ms
µs
9397 750 12337
Product data
Rev. 03 — 06 January 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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