JDP2S01T Datasheet, PDF (132/150 Pages) Toshiba Semiconductor – UHF~VHF Band RF Attenuator Applications

Philips Semiconductors
ISP1362
Single-chip USB OTG controller
Table 147: Static characteristics: charge pump…continued
V_CC = 3.0 V to 3.6 V; GND = 0 V; T_amb = −40 °C to +85 °C; C_LOAD = 2 µF; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
I_CC(cp)(susp)
suspend supply current for GlobalPowerDown bit of the -
-
charge pump
HcHardwareConfiguration
register is logic 0
GlobalPowerDown bit of the -
-
HcHardwareConfiguration
register is logic 1
I_CC(cp)
operating supply current in
charge pump mode
ATX is idle
I_LOAD = 8 mA
-
-
I_LOAD = 0 mA
-
-
V_{th(VBUS_VLD)}
V_BUS valid threshold
4.4
-
V_{th(SESS_END)}
V_BUS session end threshold
0.2
-
V_{hys(SESS_END)} V_BUS session end hysteresis
-
150
V_{th(ASESS_VLD)} V_BUS A valid threshold
0.8
-
V_{hys(ASESS_VLD)} V_BUS A valid hysteresis
-
200
V_{th(BSESS_VLD)} V_BUS B valid threshold
2
-
V_{hys(BSESS_VLD)} V_BUS B valid hysteresis
-
200
E
efficiency when loaded
I_LOAD = 8 mA; V_IN = 3 V;
-
75
see Figure 28
I_VBUS(leak)
leakage current from V_BUS
-
15
R_VBUS(PU)
V_BUS pull-up resistance
pull to V_CC when enabled
281
-
R_VBUS(PD)
V_BUS pull-down resistance pull to GND when enabled
656
-
R_VBUS(IDLE)
V_BUS idle impedance for the when ID = LOW and
A-device
DRV_VBUS = 0
40
-
R_VBUS(ACTIVE)
V_BUS active pull-down
impedance
when ID = HIGH and
DRV_VBUS =1
-
350
Max
45
15
20
300
-
0.8
-
2
-
4
-
-
-
-
-
100
-
Unit
µA
µA
mA
µA
V
V
mV
V
mV
V
mV
%
µA
Ω
Ω
kΩ
kΩ
9397 750 12337
Product data
Rev. 03 — 06 January 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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