LM3S5R36_13 Datasheet, PDF (1007/1063 Pages) Texas Instruments – LM3S5R36 Microcontroller

NRND: Not recommended for new designs.
Stellaris^® LM3S5R36 Microcontroller
Figure 24-11. Hibernation Module Timing with Internal Oscillator Running in Hibernation
32.768 KHz
(internal)
H1
H8
H2
HIB
H3
WAKE
H5
Figure 24-12. Hibernation Module Timing with Internal Oscillator Stopped in Hibernation
32.768 KHz
(internal)
H1
H8
H2
HIB
H4
WAKE
H6
24.11 Flash Memory
24.12
Table 24-20. Flash Memory Characteristics
Parameter
Parameter Name
Min
Nom
Max
PE_CYC
Number of guaranteed program/erase cycles 15,000
before failure^a
-
-
T_RET
Data retention, -40˚C to +85˚C
10
T_PROG
Word program time
-
T_BPROG
Buffer program time
-
T_ERASE
Page erase time
-
T_ME
Mass erase time
-
a. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
-
-
-
1
-
1
-
12
-
16
Unit
cycles
years
ms
ms
ms
ms
Input/Output Characteristics
Note: All GPIO signals are 5-V tolerant when configured as inputs except for PB0 and PB1, which
are limited to 3.6 V. See “Signal Description” on page 408 for more information on GPIO
configuration.
Table 24-21. GPIO Module Characteristics^a
Parameter
R_GPIOPU
R_GPIOPD
I_LKG
Parameter Name
GPIO internal pull-up resistor
GPIO internal pull-down resistor
GPIO input leakage current^b
Min
Nom
Max
Unit
100
-
300
kΩ
200
-
500
kΩ
-
-
2
µA
October 06, 2012
Texas Instruments-Production Data
1007