M16C62_M Datasheet, PDF (301/615 Pages) Renesas Technology Corp – 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M16C/60 SERIES

Electrical characteristics
Mitsubishi microcomputers
M16C / 62M Group
(Low voltage version)
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
Table 1.31.4. A-D conversion characteristics (referenced to VCC = AVCC = VREF = 2.4V to 3.6V, VSS = AVSS
= 0V, at Topr = – 20^oC to 85^oC / – 40^oC to 85^oC (Note 2), f(XIN)=10MHZ unless otherwise specified)
Symbol
Parameter
Measuring condition
Standard
Min. Typ. Max ^Unit
– Resolution
VREF =VCC
–
Absolute accuracy Sample & hold function not available (8 bit) _{VREF =VCC=3V, fAD=fAD/2}
10 Bits
±2 LSB
RLADDER Ladder resistance
VREF =VCC
10
40 kΩ
tCONV
Conversion
time(8bit)
9.8
µs
VREF
Reference voltage
VI A
Analog input voltage
Note 1: Connect AVCC pin to VCC pin and apply the same electric potential.
2.4
VCC V
0
VREF V
Note 2: Specify a product of –40°C to 85°C to use it.
Table 1.31.5. D-A conversion characteristics (referenced to VCC = 2.4V to 3.6V, VSS = AVSS = 0V, VREF=3V,
at Topr = – 20^oC to 85^oC / – 40^oC to 85^oC (Note 2), f(XIN)=10MHZ unless otherwise specified)
Symbol
Parameter
Measuring condition
Standard
Min. Typ. Max ^Unit
–
Resolution
8 Bits
–
tsu
Absolute accuracy
Setup time
1.0 %
3 µs
RO
IVREF
Output resistance
Reference power supply input current
(Note1)
4 10 20 kΩ
1.0 mA
Note 1: This applies when using one D-A converter, with the D-A register for the unused D-A converter set to “0016”.
The A-D converter's ladder resistance is not included.
Also, when D-A register contents are not “0016”, the current IVREF always flows even though Vref may have
been set to be “unconnected” by the A-D control register.
Note 2: Specify a product of –40°C to 85°C to use it.
Table 1.31.6. Flash memory version electrical characteristics
(referenced to VCC = 2.7V to 3.6V, at Topr = 0^oC to 60^oC unless otherwise specified)
Parameter
Standard
Min.
Typ.
Max
Unit
Page program time
6
120
ms
Block erase time
50
600
ms
Erase all unlocked blocks time
50 X n (Note) 600 X n (Note) ms
Lock bit program time
6
120
ms
Note : n denotes the number of block erases.
Table 1.31.7. Flash memory version program voltage and read operation voltage characteristics
(Topr = 0^oC to 60^oC)
Flash program voltage
Flash read operation voltage
VCC=2.7V to 3.6V
VCC=2.4V to 3.6V
VCC=2.7V to 3.4V
VCC=2.2V to 2.4V
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