M30222 Datasheet, PDF (229/237 Pages) Mitsubishi Electric Semiconductor – SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

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MITSUBISHI MICROCOMPUTERS
M30222 Group
Rev. G
Serial I/O Mode 2 (Flash Memory Version)
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
(3) Block Erase Command
This command erases the data in the specified block. To execute the block erase command :
(1) Transfer the “2016” command code with the 1st byte.
(2) Transfer addresses A8 to A15 and A16 to A23 with the 2nd and 3rd bytes respectively.
(3) Transfer the verify command code “D016” with the 4th byte. With the verify command code, the erase
operation will start for the specified block in the flash memory. Write the highest address of the specified block
for addresses A16 to A23.
When block erase ends, the RTS1 (BUSY) signal changes from the "H" to the "L" level. Afterward, the result of
the block erase operation is known by reading the status register. Each block can be erase-protected with the
lock bit.
RxD1
(M16C receive data)
2016
A8 to A16 to
A15
A23
D016
TxD1
(M16C transmit data)
Figure 1.188. Timing for block erase
(4) Erase All Unlocked Blocks Command
This command erases the content of all blocks. Execute the erase all blocks command as explained here
following.
(1) Transfer the “A716” command code with the 1st byte.
(2) Transfer the verify command code “D016” with the 2nd byte. With the verify command code, the erase
operation will start and continue for all blocks in the flash memory.
When block erasing ends, the RTS1 (BUSY) signal changes from the "H" to the "L" level. The result of the erase
operation is known be reading the status register. Each block can be erase protected with the lock bit.
RxD1
(M16C receive data)
A716 D016
TxD1
(M16C transmit data)
Figure 1.187. Timing for erasing all unlocked blocks
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