M30222 Datasheet, PDF (210/237 Pages) Mitsubishi Electric Semiconductor – SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

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Specifications in this manual are tentative and subject to change
MITSUBISHI MICROCOMPUTERS
M30222 Group
Rev. G
Serial I/O Mode 1 (Flash Memory Version)
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
(1) Page Read Command
This command reads the specified page (256 bytes) in the flash memory sequentially one byte at a time.
Execute the page read command as explained here following.
(1) Transfer the “FF16” command code with the 1st byte.
(2) Transfer addresses A8 to A15 and A23 with the 2nd and 3rd bytes respectively.
(3) From the 4th byte onward, data (D0–D7) for the page (256 bytes) specified with address A8 to A23 will be
output sequentially from the smallest address first in sync with the rise of the clock.
CLK0
RxD0
TxD0
FF16
A8 to
A15
A16 to
A23
data0
data255
RTS0(BUSY)
Fig. 1.162. Timing for page read
(2) Page Program Command
This command writes the specified page (256 bytes) in the flash memory sequentially one byte at a time.
Execute the page program command as explained here following.
(1) Transfer the "4116" command code with the 1st byte.
(2) Transfer addresses A8 to A15 and A16 to A23 with the 2nd and 3rd bytes respectively.
(3) From the 4th byte onward, as write data (D0–D7) for the page (256 bytes) specified with addresses A8 to
A23 is input sequentially from the smallest address first, that page is automatically written.
When reception setup for the next 256 bytes ends, the RTS0 (BUSY) signal changes from the "H" to the "L"
level. The result of the page program can be known by reading the status register. For more information, see
the section on the status register.
CLK0
RxD0
TxD0
4116
A8 to A16 to
A15 A23
data0
RTS0(BUSY)
Fig. 1.163. Timing for the page program
data255
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