MC68HC908GP20 Datasheet, PDF (398/406 Pages) Freescale Semiconductor, Inc – M68HC08 Microcontrollers

23.18 Memory Characteristics
Characteristic
Symbol
Min
Typ
Max
Unit
RAM data retention voltage
FLASH pages per row
V_RDR
—
1.3
—
—
V
8
—
8
Pages
FLASH bytes per page
FLASH read bus clock frequency
FLASH charge pump clock frequency
(See 11.5.1 FLASH Charge Pump Frequency
Control.)
—
f_Read(1)
f_Pump(2)
8
—
8
Bytes
32 k
—
8.4 M
Hz
1.8
—
2.5
MHz
FLASH block/bulk erase time
FLASH high-voltage kill time
FLASH return to read time
FLASH page program pulses
FLASH page program step size
FLASH cumulative program time per row between
erase cycles
t_Erase
100
—
—
ms
t_Kill
200
—
—
µs
t_HVD
50
fls_Pulses(3)
1
t_PROG(4)
1.0
—
—
µs
20
TBD Pulses
—
1.2
ms
t_Row(5)
—
—
TBD
ms
FLASH HVEN low to MARGIN high time
FLASH MARGIN high to PGM low time
FLASH row erase endurance⁽⁶⁾
FLASH row program endurance⁽⁷⁾
FLASH data retention time⁽⁸⁾
t_HVTV
t_VTP
—
—
—
50
—
150
—
100
—
100
—
10
—
—
µs
—
µs
—
Cycles
—
Cycles
—
Years
Notes:
1. f_Read is defined as the frequency range for which the FLASH memory can be read.
2. f_Pump is defined as the charge pump clock frequency required for program, erase, and margin read operations.
3. fls_Pulses is defined as the number of pulses used to program the FLASH using the required smart program algorithm.
4. t_PROG is defined as the amount of time during one page program cycle that HVEN is held high.
5. t_Row is defined as the cumulative time a row can see the program voltage before the row must be erased before further
programming.
6. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
erase / program cycles.
7. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
erase / program cycles.
8. The FLASH is guaranteed to retain data over the entire temperature range for at least the minimum time specified.
Advance Information
398
MC68HC908GP20 — Rev 2.1
Freescale Semiconductor