HD64F3670 Datasheet, PDF (255/323 Pages) Renesas Technology Corp – Hitachi Single-Chip Microcomputer

17.2.6 Flash Memory Characteristics (Preliminary)
Table 17.7 Flash Memory Characteristics (Preliminary)
V_CC = 3.0 V to 5.5 V, V_SS = 0.0 V, T_a = –20°C to +75°C, unless otherwise specified.
Item
Test
Symbol Condition
Min
Programming time (per 128 bytes)*¹*²*⁴
t_P
—
Erase time (per block) *¹*³*⁶
t_E
—
Reprogramming count
N_WEC
—
Programming Wait time after SWE
x
1
bit setting*¹
Wait time after PSU
y
50
bit setting*¹
Wait time after P bit setting z1
*¹*⁴
z2
1≤n≤6
28
7 ≤ n ≤ 1000 198
z3
Additional-
8
programming
Wait time after P bit clear*¹ α
5
Wait time after PSU bit clear*¹ β
5
Wait time after PV
γ
4
bit setting*¹
Wait time after dummy write*¹ ε
2
Wait time after PV bit clear*¹ η
2
Wait time after SWE
θ
100
bit clear*¹
Maximum
N
—
programming count*¹*⁴*⁵
Values
Typ Max
7
—
100 —
—
1000
—
—
—
—
30
32
200 202
10
12
—
—
—
—
—
—
—
—
—
—
—
—
—
1000
Unit
ms
ms
Times
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Times
Rev. 2.0, 03/02, page 231 of 298