PIC18F26K80-I Datasheet, PDF (537/622 Pages) Microchip Technology – 28/40/44/64-Pin, Enhanced Flash Microcontrollers with ECAN™ and nanoWatt XLP Technology

PIC18F66K80 FAMILY
31.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings^(†)
Ambient temperature under bias.............................................................................................................-40°C to +125°C
Storage temperature .............................................................................................................................. -65°C to +150°C
Voltage on MCLR with respect to VSS.......................................................................................................... -0.3V to 9.0V
Voltage on any digital only I/O pin with respect to VSS (except VDD)........................................................... -0.3V to 7.5V
Voltage on any combined digital and analog pin with respect to VSS (except VDD and MCLR)...... -0.3V to (VDD + 0.3V)
Voltage on VDD with respect to VSS (PIC18F66K80) .................................................................................. -0.3V to 7.5V
Voltage on VDD with respect to VSS (PIC18LF66K80) .............................................................................. -0.3V to 3.66V
Total power dissipation (Note 1) ..................................................................................................................................1W
Maximum current out of VSS pin ...........................................................................................................................300 mA
Maximum current into VDD pin ..............................................................................................................................250 mA
Input clamp current, IIK (VI < 0 or VI > VDD) ......................................................................................................... ±20 mA
Output clamp current, IOK (VO < 0 or VO > VDD) .................................................................................................. ±20 mA
Maximum output current sunk by PORTA<7:6> and any PORTB and PORTC I/O pins.........................................25 mA
Maximum output current sunk by any PORTD and PORTE I/O pins........................................................................8 mA
Maximum output current sunk by PORTA<5:0> and any PORTF and PORTG I/O pins...........................................2 mA
Maximum output current sourced by PORTA<7:6> and any PORTB and PORTC I/O pins ...................................25 mA
Maximum output current sourced by any PORTD, PORTE and PORTJ I/O pins .....................................................8 mA
Maximum output current sourced by PORTA<5:0> and any PORTF, PORTG and PORTH I/O pins .......................2 mA
Maximum current sunk byall ports combined.......................................................................................................200 mA
Note 1: Power dissipation is calculated as follows:
Pdis = VDD x {IDD –  IOH} +  {(VDD – VOH) x IOH} + (VOL x IOL)
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
 2010-2012 Microchip Technology Inc.
DS39977F-page 537