MC9S12Q128_10 Datasheet, PDF (623/644 Pages) Freescale Semiconductor, Inc – HCS12 Microcontrollers

Appendix A Electrical Characteristics
Table A-18. NVM Timing Characteristics
Conditions are shown in Table A-4 unless otherwise noted
Num C
Rating
Symbol
Min
Typ
Max
Unit
1 D External Oscillator Clock
f_NVMOSC
0.5
—
50⁽¹⁾
MHz
2
D Bus frequency for Programming or Erase Operations f_NVMBUS
1
—
MHz
3 D Operating Frequency
4
P Single Word Programming Time
5 D Flash Burst Programming consecutive word
6 D Flash Burst Programming Time for 32 Word row
6 D Flash Burst Programming Time for 64 Word row
7
P Sector Erase Time
8
P Mass Erase Time
9 D Blank Check Time Flash per block
9 D Blank Check Time Flash per block
1. Restrictions for oscillator in crystal mode apply!
f_NVMOP
t_swpgm
t_bwpgm
t_brpgm
t_brpgm
t_era
t_mass
t _check
t _check
150
—
200
kHz
46⁽²⁾
—
74.5⁽³⁾
µs
20.4²
—
31³
µs
678.4²
— 1035.5³
µs
1331.2² — 2027.5³
µs
20⁽⁴⁾
—
26.7³
ms
100⁴
—
133³
ms
11⁽⁵⁾
11⁽⁸⁾
—
32778^{(6) (7)}t_cyc
—
65546⁽⁹⁾
7_tcyc
2. Minimum Programming times are achieved under maximum NVM operating frequency f _NVMOP and maximum bus frequency
f_bus.
3. Maximum Erase and Programming times are achieved under particular combinations of f _NVMOP and bus frequency f bus. Refer
to formulae in Sections A.3.1.1 - A.3.1.4 for guidance.
4. Minimum Erase times are achieved under maximum NVM operating frequency f _NVMOP.
5. Minimum time, if first word in the array is not blank (512 byte sector size).
6. Maximum time to complete check on an erased block (512 byte sector size)
7. Where t_cyc is the system bus clock period.
8. Minimum time, if first word in the array is not blank (1024 byte sector size)
9. Maximum time to complete check on an erased block (1024 byte sector size).
Freescale Semiconductor
MC9S12Q128
623
Rev 1.10