MC9S12Q128_10 Datasheet, PDF(622/644 Page) Freescale Semiconductor, Inc – HCS12 Microcontrollers

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MC9S12Q128_10 Datasheet, PDF (622/644 Pages) Freescale Semiconductor, Inc – HCS12 Microcontrollers

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Appendix A Electrical Characteristics

A.5.1.1 Single Word Programming

The programming time for single word programming is dependant on the bus frequency as a well as on the

frequency fÂ¨NVMOP and can be calculated according to the following formula.

tswpgm = 9 â f--N----V----1M-----O----P-- + 25 â -f-b--1--u---s-

A.5.1.2 Row Programming

Generally the time to program a consecutive word can be calculated as:

tbwpgm = 4 â f--N----V----1M-----O----P-- + 9 â f--b--1--u---s-

For theQ16 and Q32 device ï¬ash arrays, where up to 32 words in a row can be programmed consecutively

by keeping the command pipeline ï¬lled, the time to program a whole row is:

tbrpgm = tswpgm + 31 â tbwpgm

For the Q64,Q96 and Q128 device ï¬ash arrays, where up to 64 words in a row can be programmed

consecutively by keeping the command pipeline ï¬lled, the time to program a whole row is:

tbrpgm = tswpgm + 63 â tbwpgm

Row programming is more than 2 times faster than single word programming.

A.5.1.3 Sector Erase

Erasing either a 512 byte or 1024 byte Flash sector takes:

tera â 4000 â f--N----V----1M-----O----P--

The setup times can be ignored for this operation.

A.5.1.4 Mass Erase

Erasing a NVM block takes:

tmass â 20000 â f--N----V----1M-----O----P--

This is independent of sector size.

The setup times can be ignored for this operation.

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MC9S12Q128

Freescale Semiconductor

Rev 1.10

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