EP7211 Datasheet, PDF (133/166 Pages) Cirrus Logic – HIGH-PERFORMANCE ULTRA-LOW-POWER SYSTEM-ON-CHIP WITH LCD CONTROLLER

EP7211
High-Performance Ultra-Low-Power System-on-Chip with LCD Controller
Table 6-1. DC Characteristics (cont.)
Symbol
Parameter
Min
IIN
Input leakage current
IOZ
Output tri-state leakage current*
25
CIN
Input capacitance
8
COUT
Output capacitance
8
CI/O
Transceiver capacitance
8
IDD_startup Startup current consumption
IDD_standby Standby current consumption
IDD_idle
IDD_operating
Idle current consumption
At 13 MHz
At 18 MHz
At 36 MHz
Operating current consumption
At 13 MHz
At 18 MHz
At 36 MHz
At 49 MHz
At 74 MHz
V_DDstandby Standby supply voltage
TBD
Max
1
100
10
10
10
4
4.2
6
12
14
20
40
50
68
Unit
Conditions
µA VIN = V_DD or GND
µA VOUT = V_DD or GND
pF
pF
pF
µA Initial 100 ms from power up, 32
kHz oscillator not stable, POR
signal at VIL, all other I/O static,
VIH = V_DD ± 0.1 V, VIL = GND ±
0.1 V
µA Just 32 kHz oscillator running,
all other I/O static, VIH = V_DD ±
0.1 V, VIL = GND ± 0.1 V
mA Both oscillators running, CPU
static, LCD refresh active, VIH =
V_DD ± 0.1 V, VIL = GND ± 0.1 V
mA All system active, running typi-
cal program
V Minimum standby voltage for
state retention and RTC opera-
tion only
NOTE: All power dissipation values can be derived from taking the particular IDD current and multiplying by
2.5 V.
The RTC of the EP7211 should be brought up at room temperature. This is required because the RTC
OSC will NOT function properly if it is brought up at –40°C. Once operational, it will continue to oper-
ate down to –40°C.
A typical design will provide 3.3 V to the I/O supply (i.e., VDDIO), and 2.5 V to the remaining logic.
This is to allow the I/O to be compatible with 3.3 V powered external logic (e.g., 3.3 V DRAMs).
Pull-up current = 50 µA typical at V_DD = 3.3 volts.
DS352PP3
JUL 2001
133
Electrical Specifications