S71PL129JC0 Datasheet, PDF (81/149 Pages) SPANSION – Stacked Multi-Chip Product (MCP) Flash Memory

Advance Information
DC Characteristics (Ta = -40°C to 85°C, VDD = 2.6 to 3.3 V) (See Note 3 to 4)
Symbol
Parameter
Test Condition
Min
Typ.
Max Unit
I_IL
Input Leakage
Current
V_IN = 0 V to V_DD
-1.0
—
+1.0 µA
I_LO
Output Leakage
Current
Output disable, V_OUT = 0 V to V_DD
-1.0
—
+1.0 µA
V_OH Output High Voltage I_OH = - 0.5 mA
2.0
¾
V
V
V_OL Output Low Voltage I_OL = 1.0 mA
—
—
0.4
V
I_DDO1 Operating Current
CE1#= V_IL, CE2 = V_IH, I_OUT = 0 ^ET5UZ8A-43DS
mA, t_RC = min.
ET5VB5A-43DS
—
—
—
—
40
mA
50
I_DDO2
Page Access
Operating Current
CE1#= V_IL, CE2 = V_IH, I_OUT = 0 mA
Page add. cycling, t_RC = min.
—
I_DDS
Standby Current
(MOS)
CE1# = V_DD - 0.2 V,
CE2 = V_DD - 0.2 V
ET5UZ8A-43DS —
ET5VB5A-43DS —
—
25
mA
—
70
mA
—
100 µA
I_DDSD
Deep Power-down
Standby Current
CE2 = 0.2 V
—
—
5
µA
Capacitance (Ta = 25°C, f = 1 MHz)
Symbol
Parameter
Test Condition
Max
Unit
C_IN
Input Capacitance
V_IN = GND
10
pF
C_OUT
Output Capacitance
V_OUT = GND
10
pF
Note: This parameter is sampled periodically and is not 100% tested.
AC Characteristics and Operating Conditions
(Ta = -40°C to 85°C, VDD = 2.6 to 3.3 V) (See Note 5 to 11)
Symbol
Parameter
t_RC
t_ACC
t_CO
t_OE
t_BA
t_COE
t_OEE
t_BE
t_OD
t_ODO
t_BD
Read Cycle Time
Address Access Time
Chip Enable (CE1#) Access Time
Output Enable Access Time
Data Byte Control Access Time
Chip Enable Low to Output Active
Output Enable Low to Output Active
Data Byte Control Low to Output Active
Chip Enable High to Output High-Z
Output Enable High to Output High-Z
Data Byte Control High to Output High-Z
Min Max Unit
70 10000 ns
—
70
ns
—
70
ns
—
25
ns
—
25
ns
10
—
ns
0
—
ns
0
—
ns
—
20
ns
—
20
ns
—
20
ns
Ocotober 16, 2004 pSRAM_Type06_14_A1
pSRAM Type 6
81