S71PL129JC0 Datasheet, PDF (117/149 Pages) SPANSION – Stacked Multi-Chip Product (MCP) Flash Memory

Advance Information
Low Power ICC Characteristics (32M)
Item
Symbol
PAR Mode Standby Current I_PAR
RMS Mode Standby Current I_RMSSB
Deep Sleep Current
I_ZZ
Test
V_IN = V_CC or 0V,
Chip Disabled, t_A= 85^oC
V_IN = V_CC or 0V,
Chip Disabled, t_A= 85^oC
V_IN = V_CC or 0V,
Chip in ZZ mode, t_A= 85^oC
Address Patterns for PAR (A3= 0, A4=1) (16M)
Array Partition Typ
1/4 Array
1/2 Array
8Mb Device
16Mb Device
Max Unit
75
µA
90
µA
75
µA
90
µA
10
µA
A2 A1 A0
Active Section
0 1 1 One-quarter of die
0 1 0 One-half of die
x 0 0 Full die
1 1 1 One-quarter of die
1 1 0 One-half of die
Address Space
00000h - 0FFFFh
00000h - 7FFFFh
00000h - FFFFFh
C0000h - FFFFh
80000h - 1FFFFFh
Address Patterns for RMS (A3 = 1, A4 = 1) (16M)
Size
256Kb x 16
512Kb x 16
1Mb x 16
256Kb x 16
512Kb x 16
Density
4Mb
8Mb
16Mb
4Mb
8Mb
A2 A1 A0
Active Section
0 1 1 One-quarter of die
0 1 0 One-half of die
1 1 1 One-quarter of die
1 1 0 One-half of die
Address Space
00000h - 0FFFFh
00000h - 7FFFFh
C0000h - FFFFFh
80000h - FFFFFh
Low Power ICC Characteristics (16M)
Size
256Kb x 16
512Kb x 16
256Kb x 16
512Kb x 16
Density
4Mb
8Mb
4Mb
8Mb
Item
PAR Mode Standby Current
RMS Mode Standby Current
Deep Sleep Current
Symbol
Test
Array Partition Typ
I_PAR
V_IN = V_CC or 0V,
Chip Disabled, t_A= 85^oC
1/4 Array
1/2 Array
I_RMSSB
V_IN = V_CC or 0V,
Chip Disabled, t_A= 85^oC
4Mb Device
8Mb Device
I_ZZ
V_IN = V_CC or 0V,
Chip in ZZ# mode, t_A= 85^oC
Max Unit
65
µA
80
65
µA
80
10
µA
August 30, 2004 pSRAM_Type01_12_A1
pSRAM Type 1
117