S71PL129JC0 Datasheet, PDF (12/149 Pages) SPANSION – Stacked Multi-Chip Product (MCP) Flash Memory

S29PL129J for MCP
128 Megabit (8 M x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Read/Write
Flash Memory with Enhanced VersatileIO^TM Control
Datasheet
ADVANCE
INFORMATION
Distinctive Characteristics
Architectural Advantages
„ 128 Mbit Page Mode devices
— Page size of 8 words: Fast page read access from
random locations within the page
„ Single power supply operation
— Full Voltage range: 2.7 to 3.6 volt read, erase, and
program operations for battery-powered applications
„ Dual Chip Enable inputs (only in PL129J)
— Two CE# inputs control selection of each half of the
memory space
„ Simultaneous Read/Write Operation
— Data can be continuously read from one bank while
executing erase/program functions in another bank
— Zero latency switching from write to read operations
„ FlexBank Architecture
— 4 separate banks, with up to two simultaneous
operations per device
— CE#1 controlled banks:
Bank 1A:
- 16Mbit (4Kw x 8 and 32Kw x 31)
Bank 1B:
- 48Mbit (32Kw x 96)
— CE#2 controlled banks:
Bank 2A:
- 48 Mbit (32Kw x 96)
Bank 2B:
- 16Mbit (4Kw x 8 and 32Kw x 31)
„ Enhanced VersatileI/O^TM (V_IO) Control
— Output voltage generated and input voltages
tolerated on all control inputs and I/Os is determined
by the voltage on the V_IO pin
„ Secured Silicon Sector region
— Up to 128 words accessible through a command
sequence
— Up to 64 factory-locked words
— Up to 64 customer-lockable words
„ Both top and bottom boot blocks in one device
„ Manufactured on 110 nm process technology
„ Data Retention: 20 years typical
„ Cycling Endurance: 1 million cycles per sector
typical
Performance Characteristics
„ High Performance
— Page access times as fast as 20 ns
— Random access times as fast as 55 ns
„ Power consumption (typical values at 10 MHz)
— 45 mA active read current
— 17 mA program/erase current
— 0.2 µA typical standby mode current
Software Features
„ Software command-set compatible with JEDEC
42.4 standard
— Backward compatible with Am29F, Am29LV,
Am29DL, and AM29PDL families and MBM29QM/RM,
MBM29LV, MBM29DL, MBM29PDL families
„ CFI (Common Flash Interface) compliant
— Provides device-specific information to the system,
allowing host software to easily reconfigure for
different Flash devices
„ Erase Suspend / Erase Resume
— Suspends an erase operation to allow read or
program operations in other sectors of same bank
„ Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
Hardware Features
„ Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting program or
erase cycle completion
„ Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
„ WP#/ ACC (Write Protect/Acceleration) input
— At V_IL, hardware level protection for the first and
last two 4K word sectors.
— At V_IH, allows removal of sector protection
— At V_HH, provides accelerated programming in a
factory setting
„ Persistent Sector Protection
— A command sector protection method to lock
combinations of individual sectors and sector groups
Publication Number S29PL129J_MCP_00 Revision A Amendment 0 Issue Date June 4, 2004