S71PL129JC0 Datasheet, PDF (48/149 Pages) SPANSION – Stacked Multi-Chip Product (MCP) Flash Memory

Advance Information
START
Write Program
Command Sequence
Embedded
Program
algorithm
in progress
Data Poll
from System
Verify Data?
No
Yes
Increment Address
No
Last Address?
Yes
Programming
Completed
Note: See Table 12 for program command sequence.
Figure 4. Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase command sequence is ini-
tiated by writing two unlock cycles, followed by a set-up command. Two
additional unlock write cycles are then followed by the chip erase command,
which in turn invokes the Embedded Erase algorithm. The device does not require
the system to preprogram prior to erase. The Embedded Erase algorithm auto-
matically preprograms and verifies the entire memory for an all zero data pattern
prior to electrical erase. The system is not required to provide any controls or tim-
ings during these operations. Table 12 shows the address and data requirements
for the chip erase command sequence.
When the Embedded Erase algorithm is complete, that bank returns to the read
mode and addresses are no longer latched. The system can determine the status
of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. Refer to “Write Op-
eration Status” on page 56 for information on these status bits.
Any commands written during the chip erase operation are ignored. Note that Se-
cured Silicon Sector, autoselect, and CFI functions are unavailable when a
[program/erase] operation is in progress. However, note that a hardware reset
immediately terminates the erase operation. If that occurs, the chip erase com-
mand sequence should be reinitiated once that bank has returned to reading
array data, to ensure data integrity.
Figure 5 illustrates the algorithm for the erase operation. See the Erase/Program
Operations tables in AC Characteristics for parameters, and Figure 16 for timing
diagrams.
48
S29PL129J for MCP
S29PL129J_MCP_00_A0 June 4, 2004