S71PL129JC0 Datasheet, PDF (80/149 Pages) SPANSION – Stacked Multi-Chip Product (MCP) Flash Memory

Advance Information
Functional Description
Mode
Read (Word)
Read (Lower Byte)
Read (Upper Byte)
Write (Word)
Write (Lower Byte)
Write (Upper Byte)
Outputs Disabled
Standby
Deep Power-down Standby
CE1#
L
L
L
L
L
L
L
H
H
CE2
H
H
H
H
H
H
H
H
L
OE#
L
L
L
X
X
X
H
X
X
WE#
H
H
H
L
L
L
H
X
X
LB# UB# Address
L
L
X
L
H
X
H
L
X
L
L
X
L
H
X
H
L
X
X
X
X
X
X
X
X
X
X
I/O_1-8
D_OUT
D_OUT
High-Z
D_IN
D_IN
Invalid
High-Z
High-Z
High-Z
I/O_9-16
D_OUT
High-Z
D_OUT
D_IN
Invalid
D_IN
High-Z
High-Z
High-Z
Power
I_DDO
I_DDO
I_DDO
I_DDO
I_DDO
I_DDO
I_DDO
I_DDO
I_DDSD
Legend:L = Low-level Input (V_IL), H = High-level Input (V_IH), X = V_IL or V_IH, High-Z = High Impedance.
Absolute Maximum Ratings
Symbol
Rating
Value
Unit
V_DD
Power Supply Voltage
-1.0 to 3.6
V
V_IN
Input Voltage
-1.0 to 3.6
V
V_OUT
Output Voltage
-1.0 to 3.6
V
T_opr
Operating Temperature
-40 to 85
°C
T_strg
Storage Temperature
-55 to 150
°C
P_D
Power Dissipation
0.6
W
I_OUT
Short Circuit Output Current
50
mA
Note: ESD Immunity: Spansion Flash memory Multi-Chip Products (MCPs) may contain component devices that are
developed by Spansion and component devices that are developed by a third party (third-party components). Spansion
components are tested and guaranteed to the ESD immunity levels listed in the corresponding Spansion Flash memory
Qualification Database. Third-party components are neither tested nor guaranteed by Spansion for ESD immunity. How-
ever, ESD test results for third-party components may be available from the component manufacturer. Component man-
ufacturer contact information is listed in the Spansion MCP Qualification Report, when available. The Spansion Flash
memory Qualification Database and Spansion MCP Qualification Report are available from Spansion sales offices.
DC Recommended Operating Conditions (Ta = -40°C to 85°C)
Symbol
V_DD
V_IH
V_IL
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Min
Typ
Max
Unit
2.6
2.75
3.3
2.0
— V_DD + 0.3 (Note)
V
-0.3 (Note) —
0.4
Note: V_IH (Max) V_DD = 1.0 V with 10 ns pulse width. V_IL (Min) -1.0 V with 10 ns pulse width.
80
pSRAM Type 6
pSRAM_Type06_14_A1 Ocotober 16, 2004