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S71PL129JC0 Datasheet, PDF (133/149 Pages) SPANSION – Stacked Multi-Chip Product (MCP) Flash Memory
Advance information
Absolute Maximum Ratings
Item
Symbol
Value
Unit
Voltage of VDD Supply Relative to VSS
VDD
-0.5 to +3.6
V
Voltage at Any Pin Relative to VSS
VIN, VOUT
-0.5 to +3.6
V
Short Circuit Output Current
IOUT
±50
mA
Storage temperature
TSTG
-55 to +125
°C
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature,
etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
Recommended Operating Conditions (See Warning Below)
Parameter
Symbol
Min
Max
Unit
Supply Voltage
VDD
2.7
3.1
V
VSS
0
0
V
High Level Input Voltage (Note 1)
VIH
VDD 0.8
VDD+0.2
V
High Level Input Voltage (Note 1)
VIL
-0.3
VDD 0.2
V
Ambient Temperature
TA
-30
85
°C
Notes:
1. Maximum DC voltage on input and I/O pins is VDD+0.2V. During voltage transitions, inputs can positive overshoot to
VDD+1.0V for periods of up to 5 ns.
2. Minimum DC voltage on input or I/O pins is -0.3V. During voltage transitions, inputs can negative overshoot VSS to -1.0V for
periods of up to 5ns.
WARNING: Recommended operating conditions are normal operating ranges for the semiconductor device. All the de-
vice’s electrical characteristics are warranted when operated within these ranges.
Always use semiconductor devices within the recommended operating conditions. Operation outside these ranges can
adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet.
Users considering application outside the listed conditions are advised to contact their FUJITSU representative before-
hand.
Package Capacitance
Test conditions: TA = 25°C, f = 1.0 MHz
Symbol
CIN1
CIN2
CIO
Description
Address Input Capacitance
Control Input Capacitance
Data Input/Output Capacitance
Test Setup
Typ
VIN = 0V
—
VIN = 0V
—
VIO = 0V
—
Max
Unit
5
pF
5
pF
8
pF
November 2, 2004 pSRAM_Type07_13_A1
pSRAM Type 7
133