M16C6S_09 Datasheet, PDF (151/208 Pages) Renesas Technology Corp – SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER

M16C/6S Group
Electrical Characteristics
Table 1.19.3. Flash Memory Version Electrical Characteristics (Note 1)
Symbol
Parameter
Standard
Min.
Typ.
(Note 2)
–
Erase/Write cycle (Note 3)
100/1000 (Note 4, 6 )
–
Word program time (Vcc=3.3V, Topr=25°C)
75
–
Block erase time
8Kbyte block
0.4
16Kbyte block
0.7
32Kbyte block
1.2
tPS
Flash Memory Circuit Stabilization Wait Time
–
Data retention time (Note 5)
20
Max
600
9
9
9
15
Unit
cycle
µs
s
s
s
µs
year
Note 1: When not otherwise specified, Vcc = 3.0 to 3.6V; Topr = 0 to 60 °C.
Note 2: VCC = 3.3V; Topr = 25 °C.
Note 3: Program and Erase Endurance refers to the number of times a block erase can be performed. If the program and erase endurance is n (n=100, 1,000),
each block can be erased n times. For example, if a 8Kbytes block 0 is erased after writing 1 word data 4096 times, each to a different address, this counts as
one program and erase endurance. Data cannot be written to the same address more than once without erasing the block. (Rewrite prohibited)
Note 4: Maximum number of E/W cycles for which opration is guaranteed.
Note 5: Topr = 55°C.
Note 6: The program area for U3 and U5 is 100 E/W cycles; the program area for U7 and U9 is 1,000 E/W cycles.
Note 7: Customers desiring E/W failure rate information should contact their Renesas technical support representative.
Table 1.19.4. Flash Memory Version Program/Erase Voltage and Read Operation Voltage Characteristics
(at Topr = 0 to 60^oC)
Flash program, erase voltage
Flash read operation voltage
VCC = 3.3 V ± 0.3 V
VCC = 3.0 to 3.6 V
Rev.5.01 Dec 10, 2009 page 151 of 201
REJ03B0014-0501