MC68HC11PH8 Datasheet, PDF (72/264 Pages) Motorola, Inc – High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit

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08/Apr/97@13:55 [DS97 v 4.1]
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BYTE — EEPROM byte erase mode
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1 (set) – Erase only one byte of EEPROM.
0 (clear) – Row or bulk erase mode used.
3
This bit may be read or written at any time.
ROW — EEPROM row/bulk erase mode (only valid when BYTE = 0)
4
1 (set) – Erase only one 16 byte row of EEPROM.
0 (clear) – Erase all 768 bytes of EEPROM.
This byte can be read or written at any time.
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Table 3-8 Erase mode selection
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Byte Row
Action
0
0 Bulk erase (all 768 bytes)
0
1 Row erase (16 bytes)
7
1
0 Byte erase
1
1 Byte erase
PH8.DS03/Modes+mem
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ERASE — Erase/normal control for EEPROM
1 (set) – Erase mode.
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0 (clear) – Normal read or program mode.
This byte can be read or written at any time.
10
11
12
13
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EELAT — EEPROM latch control
1 (set) – EEPROM address and data bus set up for programming or erasing.
0 (clear) – EEPROM address and data bus set up for normal reads.
When the EELAT bit is cleared, the EEPROM can be read as if it were a ROM. The block protect
register has no effect during reads. This bit can be read and written at any time.
EEPGM — EEPROM program command
1 (set) – Program or erase voltage switched on to EEPROM array.
0 (clear) – Program or erase voltage switched off to EEPROM array.
This bit can be read at any time but can only be written if EELAT = 1.
Note: If EELAT = 0 (normal operation) then EEPGM = 0 (programming voltage disconnected).
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MOTOROLA
3-26
OPERATING MODES AND ON-CHIP MEMORY
¬^TPG
MC68HC11PH8