MC9S12C128V1 Datasheet, PDF (575/690 Pages) Freescale Semiconductor, Inc – MC9S12C Family MC9S12GC Family Reference Manual

Chapter 20
96 Kbyte Flash Module (S12FTS96KV1)
20.1 Introduction
The FTS128K1FTS96K module implements a 12896 Kbyte Flash (nonvolatile) memory. The Flash
memory contains one array of 12896 Kbytes organized as 1024768 rows of 128128 bytes with an erase
sector size of eight rows (10241024 bytes). The Flash array may be read as either bytes, aligned words, or
misaligned words. Read access time is one bus cycle for byte and aligned word, and two bus cycles for
misaligned words.
The Flash array is ideal for program and data storage for single-supply applications allowing for field
reprogramming without requiring external voltage sources for program or erase. Program and erase
functions are controlled by a command driven interface. The Flash module supports both mass erase and
sector erase. An erased bit reads 1 and a programmed bit reads 0. The high voltage required to program
and erase is generated internally. It is not possible to read from a Flash array while it is being erased or
programmed.
CAUTION
A Flash word must be in the erased state before being programmed.
Cumulative programming of bits within a Flash word is not allowed.
20.1.1 Glossary
Command Write Sequence — A three-step MCU instruction sequence to program, erase, or erase verify
the Flash array memory.
20.1.2 Features
• 12896 Kbytes of Flash memory comprised of one 12896 Kbyte array divided into 12896 sectors of
10241024 bytes
• Automated program and erase algorithm
• Interrupts on Flash command completion and command buffer empty
• Fast sector erase and word program operation
• 2-stage command pipeline for faster multi-word program times
• Flexible protection scheme to prevent accidental program or erase
• Single power supply for Flash program and erase operations
• Security feature to prevent unauthorized access to the Flash array memory
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