EP2SGX60CF780C4N Datasheet, PDF (167/316 Pages) Altera Corporation – Support for numerous single-ended and differential I/O standards

Configuration & Testing
Table 3–5 shows the specifications for bias voltage and current of the
Stratix II GX temperature sensing diode.
Table 3–5. Temperature-Sensing Diode Electrical Characteristics
Parameter
Minimum
Typical
Maximum
Unit
IBIAS high
IBIAS low
80
100
120
μA
8
10
12
μA
VBP - VBN
0.3
0.9
V
VBN
Series resistance
0.7
V
3
Ω
The temperature-sensing diode works for the entire operating range
shown in Figure 3–2.
Figure 3–2. Temperature Versus Temperature-Sensing Diode Voltage
0.95
0.90
0.85
0.80
0.75
Voltage
0.70
(Across Diode)
0.65
0.60
0.55
0.50
0.45
0.40
–55
–30
–5
20
45
Temperature (˚C)
100 μA Bias Current
10 μA Bias Current
70
95
120
Altera Corporation
October 2007
3–11
Stratix II GX Device Handbook, Volume 1