GXLV Datasheet, PDF (108/247 Pages) National Semiconductor (TI) – Geode™ GXLV Processor Series Low Power Integrated x86 Solutions

Integrated Functions (Continued)
4.3.1 Memory Array Configuration
The memory controller supports up to four 64-bit SDRAM
banks, with maximum of eight physical devices per bank.
Banks 0:1 and 2:3 must be identical configurations. Two
168-pin unbuffered SDRAM modules (DIMM) satisfy
these requirements Though the following discussion is
DIMM centric, DIMMs are not a system requirement. Each
DIMM receives a unique set of RAS, CAS, WE, and CKE
lines. Each DIMM can have one or two 64-bit DIMM
banks. Each DIMM bank is selected by a unique chip
select (CS). There are four chip select signals to choose
between a total of four DIMM banks. Each DIMM bank
also receives a unique SDCLK. Each DIMM bank can
have two or four component banks. Component bank
selection is done through the bank address (BA) lines.
For example, 16-Mbit SDRAM have two component banks
and 64-Mbit SDRAM have two or four component banks.
For single DIMM bank modules, the memory controller
can support two DIMMS with a maximum of eight compo-
nent banks. For dual DIMM bank modules, the memory
controller can support two DIMMs with a maximum of 16
component banks. Up to 16 banks can be open at the
same time. Refer to the SDRAM manufacturer’s specifica-
tion for more information on component banks.
MA[12:0]
BA[1:0]
MD[63:0]
DQM[7:0]
RASA#
CASA#
WEA#
CS0#
CS1#
CKEA
SDCLK0
SDCLK1
Geode™ GXLV
Processor
RASB#
CASB#
WEB#
CS2#
CS3#
CKEB
SDCLK2
SDCLK3
DIMM 0
Bank 0
A[12:0]
BA[1:0]
MD[63:0]
DQM[7:0]
RAS#
CAS#
WE#
S0#, S2#
CKE0
CK0, CK2
Bank 1
A[12:0]
BA[1:0]
MD[63:0]
DQM[7:0]
RAS#
CAS#
WE#
S1#, S3#
CKE1
CK1, CK3
DIMM 1
Bank 0
A[12:0]
BA[1:0]
MD[63:0]
DQM[7:0]
RAS#
CAS#
WE#
S0#, S2#
CKE0
CK0, CK2
Bank 1
A[12:0]
BA[1:0]
MD[63:0]
DQM[7:0]
RAS#
CAS#
WE#
S1#, S3#
CKE1
CK1, CK3
Figure 4-4. Memory Array Configuration
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