MC9S08AW16CFUE Datasheet, PDF (306/324 Pages) Freescale Semiconductor, Inc – MC9S08AW60 Features

Appendix A Electrical Characteristics and Timing Specifications
A.12 FLASH Specifications
This section provides details about program/erase times and program-erase endurance for the FLASH
memory.
Program and erase operations do not require any special power sources other than the normal V_DD supply.
For more detailed information about program/erase operations, see Chapter 4, “Memory.”
Table A-16. FLASH Characteristics
Num C
Characteristic
Symbol
Min
Typ¹
Max
Unit
1
P Supply voltage for program/erase
V_prog/erase
2.7
5.5
V
2
P Supply voltage for read operation
V_Read
2.7
5.5
V
3
P _{Internal FCLK frequency}²
f_FCLK
150
200
kHz
4
P Internal FCLK period (1/FCLK)
t_Fcyc
5
6.67
μs
5
P _{Byte program time (random location)}³
t_prog
9
t_Fcyc
6
C _{Byte program time (burst mode)}³
t_Burst
4
t_Fcyc
7
P _{Page erase time}³
t_Page
4000
t_Fcyc
8
P _{Mass erase time}³
t_Mass
20,000
t_Fcyc
Program/erase endurance⁴
9
C
T_L to T_H = –40°C to + 125°C
T = 25°C
10,000
—
—
cycles
—
100,000 —
10
C _{Data retention}⁵
t_{D_ret}
15
100
—
years
1 _{Typical values are based on characterization data at VDD = 5.0 V, 25°C unless otherwise stated.}
2 _{The frequency of this clock is controlled by a software setting.}
3 _{These values are hardware state machine controlled. User code does not need to count cycles. This information}
supplied for calculating approximate time to program and erase.
4 _{Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional information}
on how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical
Endurance for Nonvolatile Memory.
5 _{Typical data retention values are based on intrinsic capability of the technology measured at high temperature and}
de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines
typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
MC9S08AW60 Data Sheet, Rev 2
306
Freescale Semiconductor