MC68HC11PH8 Datasheet, PDF (74/264 Pages) Motorola, Inc – High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit

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08/Apr/97@13:55 [DS97 v 4.1]
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PH8.DS03/Modes+mem
3.4.2.3 EEPROM row erase
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The following example shows how to perform a fast erase of 16 bytes of EEPROM:
ROWE LDAB #$0E ROW=ERASE=EELAT=1
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STAB $003B Set to ROW erase mode
STAB 0,X Write any data to any address in ROW
LDAB #$0F ROW=ERASE=EELAT=EEPGM=1
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STAB $003B Turn on high voltage
JSR DLY10 Delay tEEPROG
CLR $003B Turn off high voltage and set to READ mode
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The following is an example of how to erase a single byte of EEPROM:
BYTEE LDAB #$16 BYTE=ERASE=EELAT=1
STAB $003B Set to BYTE erase mode
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STAB 0,X Write any data to address to be erased
LDAB #$17 BYTE=ERASE=EELAT=EEPGM=1
STAB $003B Turn on high voltage
JSR DLY10 Delay tEEPROG
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CLR $003B Turn off high voltage and set to READ mode
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MOTOROLA
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OPERATING MODES AND ON-CHIP MEMORY
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MC68HC11PH8