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MC68HC11PH8 Datasheet, PDF (240/264 Pages) Motorola, Inc – High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit
E clock
R/W,
Address
Data
(read)
Data
(write)
1
3
4B
2
4A
11
12
9
29
17
18
57
19
39
21
A.5.6
Figure A-13 Expansion bus timing
EEPROM characteristics
12 A.5.7
Characteristic
Programming time, tEEPROG(1)
<1MHz, RCO enabled
1Ð2MHz, RCO disabled
≥2MHz & whenever RCO enabled
Erase time: byte, row and bulk (1)
Write/erase endurance (2)
Data retention (2)
Temperature range
Unit
Ð40 to +85°C
10
20
10
10
10 000
10
ms
ms
cycles
years
(1) The RC oscillator (RCO) must be enabled (by setting the CSEL bit in the OPTION
register) for EEPROM programming and erasure when the E clock frequency is less
than 1.0MHz.
(2) Refer to the current issue of MotorolaÕs quarterly Reliability Monitor Report for the
latest failure rate information.
EPROM characteristics
(VDD = 5.0 Vdc ± 10%, VSS = 0 Vdc, TA = TL to TH, unless otherwise noted)
Characteristic
Symbol Min
Max
Unit
Programming voltage
Programming voltage detect level
Programming time
VPPE
12
VPPH
TBD
tEPROG
—
12.75
V
TBD
V
5
ms
MOTOROLA
A-16
ELECTRICAL SPECIFICATIONS (STANDARD)
TPG
MC68HC11PH8